Room temperature Si δ -growth on Ge incorporating high- K dielectricfor metal oxide semiconductor applications

A low temperature Al 2 O 3 ∕ 4 monolayer amorphous Si gate stack process was demonstrated on p -type Ge wafers using atomic layer deposition and molecular beam epitaxy. Multifrequency capacitance-voltage ( C - V ) and current-voltage ( I - V ) characteristics showed excellent electrical properties of the Pt ∕ Al 2 O 3 ∕ 4 ML Si ∕ Ge metal oxide semiconductor capacitor. No kinks from 1 MHz to 4 kHz and a leakage current density of 2.6 × 10 − 6 A ∕ cm 2 at 1 V with an equivalent oxide thickness of 2.5 nm . The interface characterization using a conductance method showed that interface trap density at the near midgap was 8 × 10 12 eV − 1 cm − 2 and a mean capture cross section of holes was extracted to be 10 − 16 cm 2 .