Optical properties and morphology of In As ∕ In P (113)B surfacequantum dots

Optical properties and morphology of In As ∕ In P (113)B surfacequantum dots

We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a Ga In As P ∕ In P (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2008-06, Vol.92 (23), p.231911-231911-3
Hauptverfasser: Nakkar, A., Folliot, H., Le Corre, A., Doré, F., Alghoraibi, I., Labbé, C., Elias, G., Loualiche, S., Pistol, M.-E., Caroff, P., Ellström, C.
Format: Artikel
Sprache:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs surface quantum dots grown by gas-source molecular beam epitaxy on a Ga In As P ∕ In P (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k ⋅ p theory in the envelope function approximation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2943651