Defect-induced degradation of rectification properties of aged Pt ∕ n - In x Zn 1 − x O y Schottky diodes
In this study, Pt/IZO ( In x Zn 1 − x O y ) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 10 5 , however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations wa...
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| Veröffentlicht in: | Applied physics letters 2008-06, Vol.92 (23), p.233507-233507-3 |
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| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | In this study, Pt/IZO
(
In
x
Zn
1
−
x
O
y
)
Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of
10
5
, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2942385 |