Nonlinear photoresists for maskless photolithography on the basisof Ag-doped As 2 S 3 glassy films

Inorganic chalcogenide photoresists are widely used in microelectronics and optoelectronics. Here, we describe strongly nonlinear chalcogenide photoresists fabricated on the basis of Ag-doped As 2 S 3 glassy films. Photoresists are prepared by vacuum coevaporation of As 2 S 3 bulk glass and Ag. Superlinear dissolution characteristics of Ag-doped photoresists are explained in the framework of the so-called "percolation approach." The advantages of superlinear photoresists for maskless photolithography are briefly discussed.