Phase dynamics of In As ∕ Ga As quantum dot semiconductor optical amplifiers

The gain and phase dynamics of In As ∕ Ga As quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while...

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Veröffentlicht in:Applied physics letters 2007-12, Vol.91 (26), p.263506-263506-3
Hauptverfasser: O'Driscoll, I., Piwonski, T., Houlihan, J., Huyet, G., Manning, R. J., Corbett, B.
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Zusammenfassung:The gain and phase dynamics of In As ∕ Ga As quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2823589