Visual-infrared electroluminescence emission from Zn O ∕ Ga As heterojunctions grown by metal-organic chemical vapor deposition
The light-emitting diode of p - Zn O ∕ n - Ga As heterojunction was grown by metal-organic chemical vapor deposition. The p - Zn O films have been formed by the doping As atoms which diffuse into ZnO film from GaAs substrate. The p -type behavior of As-doped ZnO films based on As-doped p - Zn O ∕ n...
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| Veröffentlicht in: | Applied physics letters 2007-06, Vol.90 (24), p.243504-243504-3 |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
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| Zusammenfassung: | The light-emitting diode of
p
-
Zn
O
∕
n
-
Ga
As
heterojunction was grown by metal-organic chemical vapor deposition. The
p
-
Zn
O
films have been formed by the doping As atoms which diffuse into ZnO film from GaAs substrate. The
p
-type behavior of As-doped ZnO films based on As-doped
p
-
Zn
O
∕
n
-
Ga
As
,
p
-
Zn
O
∕
p
-
Ga
As
heterojunction was studied by carrying out
I
-
V
measurements and x-ray photoelectron spectroscopy. The
I
-
V
characteristic of
p
-
Zn
O
∕
n
-
Ga
As
heterojunction showed characteristic of rectifying diode and visual-infrared electroluminescence emission under forward current injection at room temperature. The
I
-
V
of the heterounction had a threshold voltage of
∼
2.5
V
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2748093 |