Characteristics of dilute-nitride Ga As Sb N ∕ In P strained multiplequantum wells

Ga As Sb N ∕ In P strained layer superlattice (SL) structures have been grown using low-temperature metal organic chemical vapor deposition with N composition varying from 0.6% to 1.6%. High-resolution x-ray diffraction measurements indicate that Ga As Sb N ∕ In P SLs with defect-free layers and abrupt interfaces were achieved. Low-temperature photoluminescence measurements reveal that nitrogen incorporation into the GaAsSbN layers extends the emission wavelength, increases the conduction band offset, and dramatically changes the As ∕ Sb ratio. In parallel with the experimental efforts, simulation studies using a ten-band k ∙ p model are carried out to correlate the emission properties of these SL structures with experiment. Photoluminescence measurements indicate an emission wavelength redshift with respect to the simulated values.