Topotaxial growth of Ti 2 Al N by solid state reaction in Al N ∕ Ti ( 0001 ) multilayer thin films
The formation of Ti 2 Al N by solid state reaction between layers of wurtzite-AlN and α - Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al 2 O 3 ( 0001 ) at 200 ° C yielded smooth, heteroepitaxial (0001) oriented films,...
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| Veröffentlicht in: | Applied physics letters 2007-04, Vol.90 (17), p.174106-174106-3 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
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| Zusammenfassung: | The formation of
Ti
2
Al
N
by solid state reaction between layers of wurtzite-AlN and
α
-
Ti
was characterized by
in situ
x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto
Al
2
O
3
(
0001
)
at
200
°
C
yielded smooth, heteroepitaxial (0001) oriented films, with abrupt
Al
N
∕
Ti
interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at
400
°
C
led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of
Ti
3
Al
N
. Further annealing at
500
°
C
resulted in a phase transformation into
Ti
2
Al
N
(
0001
)
after only
5
min
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2731520 |