InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p - Ga N hillocks on the emission surface

To increase the light extraction efficiency, high density truncated hexagonal pyramid shaped submicron p - Ga N hillocks were formed on the emission surface of an In Ga N ∕ Ga N multiple quantum well light emitting dicode (LED) using an in situ silicon carbon nitride self-masking layer. The self-assembled hillock density was raised up to a low 10 9 cm − 2 using several nanometers of a Si 0.4 C 0.6 N 1 self-masking layer. The self-assembled hillock LED resulted in the optical power improvement up to 80% with similar electrical properties as a normal LED. This device showed a higher electrostatic discharge pass yield at over 1000 V reverse stress voltage.