Admittance spectroscopy of Cd Te ∕ Cd S solar cells subjected to varied nitric-phosphoric etching conditions

In this work we investigate the electric and structural properties of Cd Te ∕ Cd S solar cells subjected to a nitric-phosphoric (NP) acid etching procedure, employed for the formation of a Te-rich layer before back contacting. The etching time is used as the only variable parameter in the study, while admittance spectroscopy is employed for the characterization of the cells' electric properties as well as for the analysis of the defect energy levels. Particular attention was also given to the characteristics of unetched devices and it is shown that despite the larger height of back-contact barrier such samples show well defined admittance spectra, as well as allow for extraction of as much as five defect levels in the range of 0.08 - 0.9 eV above the valence band. In contrast, admittance characteristics of the etched samples show a decrease of the number of the detectable trap levels with increasing etching time. (Hence it is usual for only one or two trap levels to be reported in the literature for finished devices.) The latter leads to the anomalous Arrhenius energy plots as well as the breakdown of low-frequency capacitance characteristics for samples etched with times larger than 30 s . The observed effects are attributed to physical thinning of the cells, the etching out of grain boundaries, and the tellurium enrichment of the CdTe surface by NP etching. We also perform analysis of the back-contact barrier height as extracted from dark I - V measurements at different temperatures. The dependence of this barrier height on NP etching time is compared with that of conversion efficiency, from which conclusions are drawn about both positive and negative effects of the nitric-phosphoric etch.