Nitride-based light-emitting diodes with p - Al In Ga N surface layers prepared at various temperatures

The authors have prepared bulk p - Al In Ga N layers and light-emitting diodes (LEDs) with p - Al In Ga N surface layers by metal organic chemical vapor deposition. They found that the surfaces of the LEDs with p - Al In Ga N layers are rough with high density of hexagonal pits. They also found that the pit width and the pit density depend on the growth temperature of the p - Al In Ga N layer. Furthermore, it is found that a 62% enhancement in output intensity can be achieved from the LED with an 820 ° C p - Al In Ga N cap layer without increasing the LED operation voltage.