Experimental evaluation of impact ionization coefficients in Al x Ga 1 − x N based avalanche photodiodes
The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky b...
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| Veröffentlicht in: | Applied physics letters 2006-11, Vol.89 (18), p.183524-183524-3 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2385216 |