Surface electronic structure of HfO 2 resolved with low energy ion spectroscopy
Low energy ion scattering spectroscopy has been applied to probe surface electronic structure of HfO 2 and appeared sensitive to the presence of the band gap in the outmost surface layer. We demonstrate that HfO 2 has a clear signature in He + spectra that is remarkably different from those of metal...
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| Veröffentlicht in: | Applied physics letters 2006-10, Vol.89 (17), p.172903-172903-3 |
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| Format: | Artikel |
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| Zusammenfassung: | Low energy ion scattering spectroscopy has been applied to probe surface electronic structure of
HfO
2
and appeared sensitive to the presence of the band gap in the outmost surface layer. We demonstrate that
HfO
2
has a clear signature in
He
+
spectra that is remarkably different from those of metallic Hf and
HfSi
2
. The observed effect is described in terms of
He
+
inelastic energy loss due to electronic excitations during impact, and is used to monitor
in situ
the evolution of
HfO
2
surface electronic structure during vacuum annealing. Our data provide evidence for effective "metallization" of
HfO
2
surface under heating to
T
>
600
°
C
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2367659 |