Combinatorial study of Ni-Ti-Pt ternary metal gate electrodeson Hf O 2 for the advanced gate stack

The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O 2 using magnetron co-sputtering to investigate flatband voltage shift ( Δ V fb ) , work function ( Φ m ) , and leakage current density ( J L ) variations. A more negative Δ V fb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φ m near the Ti-rich corners and higher Φ m near the Ni- and Pt-rich corners. In addition, measured J L values can be explained consistently with the observed Φ m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.