Pressure induced phase transition in periodic microtwinned thin filmof La 0.88 Sr 0.1 MnO 3

We have studied the resistivity of a hole-doped 95 nm thin film of La 0.88 Sr 0.1 MnO 3 sample as a function of pressure up to 2.0 GPa . For pressures below 0.81 GPa , the sample showed that the resistivity decreased at all temperatures and the metal insulator transition temperature T MI increased to higher temperatures similar to the pressure results observed previously in bulk samples and thin films of manganites. However, for pressures above 0.81 GPa , we observed a rapid increase in resistivity and a rapid decrease of T MI as a function of pressure. The rate of change of T MI with pressure is − 133.5 K ∕ GPa which is an order of magnitude larger than that of bulk samples and thin films of manganite with an opposite sign. We interpreted our results as a consequence of a phase change in the film by pressure from having strain induced periodic microtwinned regions below 0.81 GPa to a strained free region and formation of coherent twins above this pressure in 95 nm thin film of La 0.88 Sr 0.1 MnO 3 .