Room temperature ultraviolet emission at 357 nm from polysilane based organic light emitting diode
We have fabricated an organic light emitting diode using poly(n-butylphenylsilane) which has an emission in deep ultraviolet at 357 nm at room temperature. The device structure used is glass/indium tin oxide/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/polysilane (emitting material)/calci...
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Veröffentlicht in: | Applied physics letters 2006-04, Vol.88 (14), p.143511-143511-3 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have fabricated an organic light emitting diode using poly(n-butylphenylsilane) which has an emission in deep ultraviolet at
357
nm
at room temperature. The device structure used is glass/indium tin oxide/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/polysilane (emitting material)/calcium/aluminum. These devices emit ultraviolet light with a turn-on voltage of
8
V
. The electroluminescence spectrum of the device in the ultraviolet range is identical to the photoluminescence spectrum of the polysilane thin film. From these devices, we also observe an additional emission in the visible region, which is not present in the photoluminescence spectrum of the material. The visible emission has a color coordinate of (0.36,0.35), which can be modulated to a required white light coordinate by down converting the ultraviolet emission. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2193652 |