Reduction of damage threshold in dielectric materials inducedby negatively chirped laser pulses

The threshold fluence for laser induced damage in wide band gap dielectric materials, fused silica and MgF 2 , is observed to be lower by up to 20% for negatively (down) chirped pulses than for positively (up) chirped, at pulse durations ranging from 60 fs to 1 ps. This behavior of the threshold fluence for damage on the chirp direction was not observed in semiconductors (silicon and GaAs). Based on a model including electron generation in the conduction band and Joule heating, it is suggested that the decrease in the damage threshold for negatively chirped pulse is related to the dominant role of multiphoton ionization in wide gap materials.