Current-controlled resistance modulation in ferroelectric Cd 1 − x Zn x S thin films for nonvolatile memory applications

Ternary II-VI semiconducting Cd 1 − x Zn x S thin films with top metal and bottom semiconductor contacts were investigated for their ferroelectric and switching properties. Bistable switching of about four orders of magnitude between low and high resistance states was observed in current-voltage measurements. Current pulse-driven reproducible resistance modulation with resistance changes up to two orders of magnitude was observed without the contribution of carrier injection. Read-write measurements with application of short pulse widths were performed that displayed an appreciable current difference between the read levels. Polarization-induced switching was addressed through the ferroelectric semiconductor∕semiconductor junction.