High mobility n -channel organic thin-film transistorsand complementary inverters

We report on n -channel organic thin-film transistors (OTFTs) with field-effect mobility comparable to that typically reported for p -channel OTFTs fabricated from pentacene. The OTFTs were fabricated on oxidized silicon wafers using N , N ′ -ditridecylperylene-3,4,9,10-tetracarboxylic diimide ( PTCDI - C 13 H 27 ) as the semiconductor and with Au, Cr, Al, and Li F ∕ Al source and drain contacts. Accumulation mode n -channel transistor operation is demonstrated for all contact metals despite the large differences in their work functions. High field-effect mobility near 0.6 cm 2 ∕ V s and large I on ∕ I off of 10 7 were achieved. Device performance is sufficient to demonstrate pentacene ∕ PTCDI - C 13 H 27 TFT complementary inverters with record gain.