Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
This study demonstrates the lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 μ A , respectively. The lasing threshold current is 131 mA at 25 ° C . T...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2005-01, Vol.86 (2), p.021108-021108-3 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 021108-3 |
|---|---|
| container_issue | 2 |
| container_start_page | 021108 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Choi, Woon Kyung Kim, Doo Gun Choi, Young Wan Lee, Seok Woo, Deok Ha Kim, Sun Ho |
| description | This study demonstrates the lasing characteristics of
In
Ga
As
∕
In
Ga
As
P
multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are
3.36
V
and
10
μ
A
, respectively. The lasing threshold current is
131
mA
at
25
°
C
. The output peak wavelength is
1570
nm
at a bias current of 1.22
I
th
and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. |
| doi_str_mv | 10.1063/1.1850184 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_1850184Lasing_characteristi</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_1850184Lasing_characteristi3</originalsourceid><addsrcrecordid>eNqlj81KxDAUhYMoWH8WvsF9gYy5xs7UjSDiH7hw4T6ENjONpElNbif0BcQX8AV9EjvMgLh2dTiHwwcfY2coZijm8hxnWJUCq8s9VqBYLLhErPZZIYSQfH5V4iE7SultquWFlAX7eNbJ-hXUrY66JhNtIlsnCEt48vCg4SbB9-fXb3mBbnBke2f4-6A9DR3PxjnIem1Wg20Mp7E30JjpQaaB0E887YDaccMOEbKlFtYmbvdsfRPyCTtYapfM6S6P2fX93evtI0-1JU02eNVH2-k4KhRqY6pQ7Uy3BuqPgfw34Acow2wX</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Choi, Woon Kyung ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho</creator><creatorcontrib>Choi, Woon Kyung ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho</creatorcontrib><description>This study demonstrates the lasing characteristics of
In
Ga
As
∕
In
Ga
As
P
multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are
3.36
V
and
10
μ
A
, respectively. The lasing threshold current is
131
mA
at
25
°
C
. The output peak wavelength is
1570
nm
at a bias current of 1.22
I
th
and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1850184</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-01, Vol.86 (2), p.021108-021108-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_1850184Lasing_characteristi3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1850184$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,781,791,1555,4499,27906,27907,76134,76140</link.rule.ids></links><search><creatorcontrib>Choi, Woon Kyung</creatorcontrib><creatorcontrib>Kim, Doo Gun</creatorcontrib><creatorcontrib>Choi, Young Wan</creatorcontrib><creatorcontrib>Lee, Seok</creatorcontrib><creatorcontrib>Woo, Deok Ha</creatorcontrib><creatorcontrib>Kim, Sun Ho</creatorcontrib><title>Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</title><title>Applied physics letters</title><description>This study demonstrates the lasing characteristics of
In
Ga
As
∕
In
Ga
As
P
multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are
3.36
V
and
10
μ
A
, respectively. The lasing threshold current is
131
mA
at
25
°
C
. The output peak wavelength is
1570
nm
at a bias current of 1.22
I
th
and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqlj81KxDAUhYMoWH8WvsF9gYy5xs7UjSDiH7hw4T6ENjONpElNbif0BcQX8AV9EjvMgLh2dTiHwwcfY2coZijm8hxnWJUCq8s9VqBYLLhErPZZIYSQfH5V4iE7SultquWFlAX7eNbJ-hXUrY66JhNtIlsnCEt48vCg4SbB9-fXb3mBbnBke2f4-6A9DR3PxjnIem1Wg20Mp7E30JjpQaaB0E887YDaccMOEbKlFtYmbvdsfRPyCTtYapfM6S6P2fX93evtI0-1JU02eNVH2-k4KhRqY6pQ7Uy3BuqPgfw34Acow2wX</recordid><startdate>20050103</startdate><enddate>20050103</enddate><creator>Choi, Woon Kyung</creator><creator>Kim, Doo Gun</creator><creator>Choi, Young Wan</creator><creator>Lee, Seok</creator><creator>Woo, Deok Ha</creator><creator>Kim, Sun Ho</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20050103</creationdate><title>Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</title><author>Choi, Woon Kyung ; Kim, Doo Gun ; Choi, Young Wan ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_1850184Lasing_characteristi3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Woon Kyung</creatorcontrib><creatorcontrib>Kim, Doo Gun</creatorcontrib><creatorcontrib>Choi, Young Wan</creatorcontrib><creatorcontrib>Lee, Seok</creatorcontrib><creatorcontrib>Woo, Deok Ha</creatorcontrib><creatorcontrib>Kim, Sun Ho</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Woon Kyung</au><au>Kim, Doo Gun</au><au>Choi, Young Wan</au><au>Lee, Seok</au><au>Woo, Deok Ha</au><au>Kim, Sun Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window</atitle><jtitle>Applied physics letters</jtitle><date>2005-01-03</date><risdate>2005</risdate><volume>86</volume><issue>2</issue><spage>021108</spage><epage>021108-3</epage><pages>021108-021108-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This study demonstrates the lasing characteristics of
In
Ga
As
∕
In
Ga
As
P
multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are
3.36
V
and
10
μ
A
, respectively. The lasing threshold current is
131
mA
at
25
°
C
. The output peak wavelength is
1570
nm
at a bias current of 1.22
I
th
and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1850184</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-01, Vol.86 (2), p.021108-021108-3 |
| issn | 0003-6951 1077-3118 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_1850184Lasing_characteristi |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T10%3A45%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lasing%20characteristics%20of%20In%20Ga%20As%20%E2%88%95%20In%20Ga%20As%20P%20multiple-quantum-well%20waveguide-type%20depleted%20optical%20thyristor%20with%20vertical%20window&rft.jtitle=Applied%20physics%20letters&rft.au=Choi,%20Woon%20Kyung&rft.date=2005-01-03&rft.volume=86&rft.issue=2&rft.spage=021108&rft.epage=021108-3&rft.pages=021108-021108-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.1850184&rft_dat=%3Cscitation%3Eapl%3C/scitation%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |