Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

This study demonstrates the lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 μ A , respectively. The lasing threshold current is 131 mA at 25 ° C . T...

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Veröffentlicht in:Applied physics letters 2005-01, Vol.86 (2), p.021108-021108-3
Hauptverfasser: Choi, Woon Kyung, Kim, Doo Gun, Choi, Young Wan, Lee, Seok, Woo, Deok Ha, Kim, Sun Ho
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Zusammenfassung:This study demonstrates the lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 μ A , respectively. The lasing threshold current is 131 mA at 25 ° C . The output peak wavelength is 1570 nm at a bias current of 1.22 I th and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1850184