Lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
This study demonstrates the lasing characteristics of In Ga As ∕ In Ga As P multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 μ A , respectively. The lasing threshold current is 131 mA at 25 ° C . T...
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Veröffentlicht in: | Applied physics letters 2005-01, Vol.86 (2), p.021108-021108-3 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
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Zusammenfassung: | This study demonstrates the lasing characteristics of
In
Ga
As
∕
In
Ga
As
P
multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are
3.36
V
and
10
μ
A
, respectively. The lasing threshold current is
131
mA
at
25
°
C
. The output peak wavelength is
1570
nm
at a bias current of 1.22
I
th
and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1850184 |