Design and fabrication of physical vapor transport system for the growth of SiC crystals

Design and fabrication of physical vapor transport system for the growth of SiC crystals

A physical vapor transport (PVT) system has been designed and fabricated for growing SiC single crystals. Novel multisegmented graphite insulation has been used for improved heat containment in the hotzone. Numerical modeling was applied to obtain the temperature field inside the hotzone, which also...

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Veröffentlicht in:Review of scientific instruments 2004-09, Vol.75 (9), p.2843-2847
Hauptverfasser: Dhanaraj, G., Dudley, M., Ma, R.-H., Zhang, H., Prasad, V.
Format: Artikel
Sprache:eng
Schlagworte:
CRYSTAL GROWTH
DESIGN
FABRICATION
MATERIALS HANDLING EQUIPMENT
MATERIALS SCIENCE
national synchrotron light source
PHYSICAL VAPOR DEPOSITION
SILICON CARBIDES
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Zusammenfassung:A physical vapor transport (PVT) system has been designed and fabricated for growing SiC single crystals. Novel multisegmented graphite insulation has been used for improved heat containment in the hotzone. Numerical modeling was applied to obtain the temperature field inside the hotzone, which also helped in predicting various growth parameters. Single crystals of 6 H SiC were grown by the modified Lely method using the PVT system developed in the laboratory. The grown crystals were subjected to preliminary characterization.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1775312