Deep level photothermal spectroscopy for characterizing Ni impurities in Si by a temperature dependent piezoelectric photothermal signal

The temperature variation of the piezoelectric photothermal (PPT) signal intensity of n-type Ni-doped Si was measured from 100 to 300 K. We observed one distinctive peak at 150 K in Ni-doped sample. Since no intense peak could be observed for the controlled sample, we consider this 150 K peak is due...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Review of Scientific Instruments 2003-01, Vol.74 (1), p.340-342
Hauptverfasser: Sato, S., Memon, A., Fukuyama, A., Tanaka, S., Ikari, T.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The temperature variation of the piezoelectric photothermal (PPT) signal intensity of n-type Ni-doped Si was measured from 100 to 300 K. We observed one distinctive peak at 150 K in Ni-doped sample. Since no intense peak could be observed for the controlled sample, we consider this 150 K peak is due to Ni impurity. The activation energy, electron capture cross section, photoionization cross section and concentrations for Ni-deep level are obtained by fitting the observed curve to that from the theoretical analysis based on a rate equation for electrons. The best-fitted parameters are well agreed with that obtained by usual deep level transient spectroscopy measurements and isothermal capacitance transient spectroscopy. Additionally, photoionization cross section of Ni-deep level in Si can be obtained by this method. Since no electrodes are necessary in this experimental technique, the PPT measurement for studying the deep level in semiconductor is very useful.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1519673