Nondestructive analysis of ultrashallow junctions using thermal wave technology

It is shown that the thermal wave (TW) nondestructive technology widely used in semiconductor industry for ion-implant monitoring can also be used for characterization of ultrashallow junctions created as a result of thermal annealing of ion implanted wafers. A set of Si wafers implanted with boron...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Review of Scientific Instruments 2003-01, Vol.74 (1), p.586-588
Hauptverfasser:	Nicolaides, Lena, Salnick, Alex, Opsal, Jon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!