Femtosecond pump-probe near-field optical microscopy
We have developed an instrument for optically measuring carrier dynamics in thin-film materials with ∼150 nm lateral resolution, ∼250 fs temporal resolution, and high sensitivity. This is achieved by combining ultrafast pump-probe laser spectroscopic techniques, which measure carrier dynamics with f...
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Veröffentlicht in: | Review of scientific instruments 1999-06, Vol.70 (6), p.2758-2764 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have developed an instrument for optically measuring carrier dynamics in thin-film materials with ∼150 nm lateral resolution, ∼250 fs temporal resolution, and high sensitivity. This is achieved by combining ultrafast pump-probe laser spectroscopic techniques, which measure carrier dynamics with femtosecond-scale temporal resolution, with the nanometer-scale lateral resolution of near-field scanning optical microscopes (NSOMs). We employ a configuration in which carriers are excited by a far-field pump laser pulse and locally measured by a probe pulse sent through a NSOM tip and transmitted through the sample in the near field. A novel detection system allows for either two-color or degenerate pump and probe photon energies, permitting greater measurement flexibility over earlier published work. The capabilities of this instrument are proven through near-field degenerate pump-probe studies of carrier dynamics in GaAs/AlGaAs single quantum well samples locally patterned by focused-ion-beam (FIB) implantation. We find that lateral carrier diffusion across the nanometer-scale FIB pattern plays a significant role in the decay time of the excited carriers within ∼1 μm of the implanted stripes, an effect which could not have been resolved with a far-field system. |
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ISSN: | 0034-6748 1089-7623 |
DOI: | 10.1063/1.1149841 |