Investigation of a 2.45 GHz ECR plasma for ion etching

Investigation of a 2.45 GHz ECR plasma for ion etching

Reactive ion‐stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field...

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Veröffentlicht in:Review of Scientific Instruments 1992-04, Vol.63 (4), p.2394-2396, Article 2394
Hauptverfasser: Eichelberger, M., Friedrich, L., Huttel, E., Wiss, L.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic, molecular and charged-particle sources and detectors
Charged-particle beam sources and detectors
Exact sciences and technology
Instruments & Instrumentation
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physical Sciences
Physics
Physics, Applied
Science & Technology
Technology
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Beschreibung
Zusammenfassung:Reactive ion‐stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1142940