A combined molecular‐beam epitaxy and scanning tunneling microscopy system

A combined molecular‐beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III‐V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high‐energy electron diffra...

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Veröffentlicht in:	Review of scientific instruments 1991-06, Vol.62 (6), p.1400-1403
Hauptverfasser:	Orr, B. G., Snyder, C. W., Johnson, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electron, positron and ion microscopes, electron diffractometers and related techniques Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A combined molecular‐beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III‐V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high‐energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce real‐space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.
ISSN:	0034-6748 1089-7623
DOI:	10.1063/1.1142456