Deep‐level transient spectroscopy in MOS structures with a dual‐channel boxcar integrator and arbitrarily chosen gate‐width–data analysis

New formulas are proposed describing the correlation signals of bulk traps and interface states in metal‐oxide‐semiconductor structures for constant voltage and constant capacitance deep‐level transient spectroscopy analog measurement systems with a dual‐channel boxcar integrator and an arbitrary ga...

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Veröffentlicht in:	Review of scientific instruments 1989-11, Vol.60 (11), p.3485-3491
Hauptverfasser:	Dmowski, K., Jakubowski, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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