Deep‐level transient spectroscopy in MOS structures with a dual‐channel boxcar integrator and arbitrarily chosen gate‐width–data analysis

New formulas are proposed describing the correlation signals of bulk traps and interface states in metal‐oxide‐semiconductor structures for constant voltage and constant capacitance deep‐level transient spectroscopy analog measurement systems with a dual‐channel boxcar integrator and an arbitrary gate width. An analysis presented enables one to maximize sensitivity of these systems for the study of low‐concentration processing‐induced defects and interface states in metal‐oxide‐semiconductor devices.