Deep‐level transient spectroscopy in MOS structures with a dual‐channel boxcar integrator and arbitrarily chosen gate‐width–data analysis
New formulas are proposed describing the correlation signals of bulk traps and interface states in metal‐oxide‐semiconductor structures for constant voltage and constant capacitance deep‐level transient spectroscopy analog measurement systems with a dual‐channel boxcar integrator and an arbitrary ga...
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| Veröffentlicht in: | Review of scientific instruments 1989-11, Vol.60 (11), p.3485-3491 |
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| container_end_page | 3491 |
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| container_issue | 11 |
| container_start_page | 3485 |
| container_title | Review of scientific instruments |
| container_volume | 60 |
| creator | Dmowski, K. Jakubowski, A. |
| description | New formulas are proposed describing the correlation signals of bulk traps and interface states in metal‐oxide‐semiconductor structures for constant voltage and constant capacitance deep‐level transient spectroscopy analog measurement systems with a dual‐channel boxcar integrator and an arbitrary gate width. An analysis presented enables one to maximize sensitivity of these systems for the study of low‐concentration processing‐induced defects and interface states in metal‐oxide‐semiconductor devices. |
| doi_str_mv | 10.1063/1.1140498 |
| format | Article |
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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dmowski, K.</creatorcontrib><creatorcontrib>Jakubowski, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Review of scientific instruments</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dmowski, K.</au><au>Jakubowski, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deep‐level transient spectroscopy in MOS structures with a dual‐channel boxcar integrator and arbitrarily chosen gate‐width–data analysis</atitle><jtitle>Review of scientific instruments</jtitle><date>1989-11-01</date><risdate>1989</risdate><volume>60</volume><issue>11</issue><spage>3485</spage><epage>3491</epage><pages>3485-3491</pages><issn>0034-6748</issn><eissn>1089-7623</eissn><coden>RSINAK</coden><abstract>New formulas are proposed describing the correlation signals of bulk traps and interface states in metal‐oxide‐semiconductor structures for constant voltage and constant capacitance deep‐level transient spectroscopy analog measurement systems with a dual‐channel boxcar integrator and an arbitrary gate width. An analysis presented enables one to maximize sensitivity of these systems for the study of low‐concentration processing‐induced defects and interface states in metal‐oxide‐semiconductor devices.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1140498</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0034-6748 |
| ispartof | Review of scientific instruments, 1989-11, Vol.60 (11), p.3485-3491 |
| issn | 0034-6748 1089-7623 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_1_1140498 |
| source | AIP Digital Archive |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Deep‐level transient spectroscopy in MOS structures with a dual‐channel boxcar integrator and arbitrarily chosen gate‐width–data analysis |
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