Magneto-transport properties of Si1−xGex <B, Hf> whiskers
The field and temperature magnetoresistance dependences of the Si1−xGex (x = 0.05) whiskers at low temperatures were studied in the magnetic field range of 0−14 T with using of the Bitter magnet. The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping...
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Veröffentlicht in: | Low temperature physics (Woodbury, N.Y.) N.Y.), 2022-07, Vol.48 (7), p.520-523 |
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creator | Druzhinin, Anatoly Ostrovskii, Igor Khoverko, Yuriy Liakh-Kaguy, Natalia |
description | The field and temperature magnetoresistance dependences of the Si1−xGex (x = 0.05) whiskers at low temperatures were studied in the magnetic field range of 0−14 T with using of the Bitter magnet. The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping concentration in the vicinity to the metal-insulator transition (Nc ≈ 7.8 ⋅ 1018 cm−3). The linear magnetoresistance effect of the solid solution Si1-xGex whiskers was found in all range of the magnetic fields due to the surface coherence scattering of charge carriers as a result of conduction in the whisker core-shell structure. |
doi_str_mv | 10.1063/10.0011598 |
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The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping concentration in the vicinity to the metal-insulator transition (Nc ≈ 7.8 ⋅ 1018 cm−3). The linear magnetoresistance effect of the solid solution Si1-xGex <B, Hf > whiskers was found in all range of the magnetic fields due to the surface coherence scattering of charge carriers as a result of conduction in the whisker core-shell structure.</description><identifier>ISSN: 1063-777X</identifier><identifier>EISSN: 1090-6517</identifier><identifier>DOI: 10.1063/10.0011598</identifier><identifier>CODEN: LTPHEG</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Chemical vapor deposition ; Coherent scattering ; Core-shell structure ; Current carriers ; Insulators ; Low temperature ; Magnetic fields ; Magnetic properties ; Magnetoresistance ; Magnetoresistivity ; Metal-insulator transition ; Silicon germanides ; Solid solutions ; Transport properties</subject><ispartof>Low temperature physics (Woodbury, N.Y.), 2022-07, Vol.48 (7), p.520-523</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping concentration in the vicinity to the metal-insulator transition (Nc ≈ 7.8 ⋅ 1018 cm−3). 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The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping concentration in the vicinity to the metal-insulator transition (Nc ≈ 7.8 ⋅ 1018 cm−3). The linear magnetoresistance effect of the solid solution Si1-xGex <B, Hf > whiskers was found in all range of the magnetic fields due to the surface coherence scattering of charge carriers as a result of conduction in the whisker core-shell structure.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/10.0011598</doi><tpages>4</tpages></addata></record> |
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subjects | Chemical vapor deposition Coherent scattering Core-shell structure Current carriers Insulators Low temperature Magnetic fields Magnetic properties Magnetoresistance Magnetoresistivity Metal-insulator transition Silicon germanides Solid solutions Transport properties |
title | Magneto-transport properties of Si1−xGex <B, Hf> whiskers |
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