Magneto-transport properties of Si1−xGex <B, Hf> whiskers

Magneto-transport properties of Si1−xGex <B, Hf> whiskers

The field and temperature magnetoresistance dependences of the Si1−xGex (x = 0.05) whiskers at low temperatures were studied in the magnetic field range of 0−14 T with using of the Bitter magnet. The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping...

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Veröffentlicht in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2022-07, Vol.48 (7), p.520-523
Hauptverfasser: Druzhinin, Anatoly, Ostrovskii, Igor, Khoverko, Yuriy, Liakh-Kaguy, Natalia
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
Coherent scattering
Core-shell structure
Current carriers
Insulators
Low temperature
Magnetic fields
Magnetic properties
Magnetoresistance
Magnetoresistivity
Metal-insulator transition
Silicon germanides
Solid solutions
Transport properties
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Zusammenfassung:The field and temperature magnetoresistance dependences of the Si1−xGex (x = 0.05) whiskers at low temperatures were studied in the magnetic field range of 0−14 T with using of the Bitter magnet. The investigated whiskers with diameters 5−15 μm were grown by chemical vapour deposition with a doping concentration in the vicinity to the metal-insulator transition (Nc ≈ 7.8 ⋅ 1018 cm−3). The linear magnetoresistance effect of the solid solution Si1-xGex  whiskers was found in all range of the magnetic fields due to the surface coherence scattering of charge carriers as a result of conduction in the whisker core-shell structure.
ISSN:1063-777X
1090-6517
DOI:10.1063/10.0011598