Electric field ionization of boron acceptors in single-crystalline diamond

Electric field ionization of boron acceptors in single-crystalline diamond

Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ∼ 5⋅105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The ho...

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Veröffentlicht in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2021-01, Vol.47 (1), p.75-78
Hauptverfasser: Altukhov, I. V., Kagan, M. S., Paprotskiy, S. K., Khvalkovskiy, N. A., Rodionov, N. B., Bol’shakov, A. P., Ral’chenko, V. G., Khmel’nitskiy, R. A.
Format: Artikel
Sprache:eng
Schlagworte:
Boron
Carrier density
Crystal structure
Crystallinity
Diamond films
Electric contacts
Electric fields
Field ionization
Single crystals
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Beschreibung
Zusammenfassung:Vertical hole transport in single-crystalline diamond films with ohmic and Schottky contacts was studied at dc and pulsed electric fields up to ∼ 5⋅105 V/cm. Conductivity mechanisms at different fields were identified. The concentrations of free carriers (holes) and acceptors were determined. The hole recombination time at boron acceptors has been estimated. The mechanisms of electric field ionization of boron acceptors are discussed.
ISSN:1063-777X
1090-6517
DOI:10.1063/10.0002901