Linear polarization of photons produced by the electron plane channeling in a silicon crystal

We present the results of the polarization and intensity measurements versus photon energy Egamma = 5 - 35 MeV for the photon beam produced by the electron plane channeling with the energies 1.2 and 1.5 GeV in silicon crystals 500 mum and 290 mum thick along the (110) plane. The comparison with results of another research group and theoretical calculations indicate a qualitative agreement. The correlation between the shape of the radiation intensity spectrum and its polarization energy dependence is observed.