Electron field emission measurements from boron-doped CVD diamond on tantalum
Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without...
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Veröffentlicht in: | Brazilian journal of physics 2003-03, Vol.33 (1), p.94-97 |
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creator | Gonçalves, J. A. N. Sandonato, G. M. Iha, K. |
description | Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field. |
doi_str_mv | 10.1590/S0103-97332003000100006 |
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A. N. ; Sandonato, G. M. ; Iha, K.</creator><creatorcontrib>Gonçalves, J. A. N. ; Sandonato, G. M. ; Iha, K.</creatorcontrib><description>Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.</description><identifier>ISSN: 0103-9733</identifier><identifier>ISSN: 1678-4448</identifier><identifier>DOI: 10.1590/S0103-97332003000100006</identifier><language>eng</language><publisher>Sociedade Brasileira de Física</publisher><subject>PHYSICS, MULTIDISCIPLINARY</subject><ispartof>Brazilian journal of physics, 2003-03, Vol.33 (1), p.94-97</ispartof><rights>This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c343t-73810ebd2652f23b7ff631e872415a0c46510ff596d51c20ab3b99c17ea9ab703</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids></links><search><creatorcontrib>Gonçalves, J. A. N.</creatorcontrib><creatorcontrib>Sandonato, G. M.</creatorcontrib><creatorcontrib>Iha, K.</creatorcontrib><title>Electron field emission measurements from boron-doped CVD diamond on tantalum</title><title>Brazilian journal of physics</title><addtitle>Braz. J. Phys</addtitle><description>Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.</description><subject>PHYSICS, MULTIDISCIPLINARY</subject><issn>0103-9733</issn><issn>1678-4448</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNp1kMtOwzAQRb0AiVL4BvwDKWM7juslKuUhFbHgsbX8lFLFcWUnC_4eQxEbxGxGV3PvzOggdEVgRbiE6xcgwBopGKMADKDKWt0JWvwOztB5KXsAyqFlC_S0Hbydchpx6P3gsI99KX2V0esyZx_9OBUccorYpGprXDp4hzfvt9j1OqbR4Wqe9DjpYY4X6DToofjLn75Eb3fb181Ds3u-f9zc7BrLWjY1gq0JeONox2mgzIgQOkb8WtCWcA227TiBELjsHCeWgjbMSGmJ8FpqI4At0eq4t9j6dVL7NOexHlTfANQfADUgjgGbUynZB3XIfdT5QxFQX-j-TX4ChZZguA</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Gonçalves, J. A. N.</creator><creator>Sandonato, G. M.</creator><creator>Iha, K.</creator><general>Sociedade Brasileira de Física</general><scope>AAYXX</scope><scope>CITATION</scope><scope>GPN</scope></search><sort><creationdate>20030301</creationdate><title>Electron field emission measurements from boron-doped CVD diamond on tantalum</title><author>Gonçalves, J. A. N. ; Sandonato, G. M. ; Iha, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-73810ebd2652f23b7ff631e872415a0c46510ff596d51c20ab3b99c17ea9ab703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>PHYSICS, MULTIDISCIPLINARY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gonçalves, J. A. N.</creatorcontrib><creatorcontrib>Sandonato, G. M.</creatorcontrib><creatorcontrib>Iha, K.</creatorcontrib><collection>CrossRef</collection><collection>SciELO</collection><jtitle>Brazilian journal of physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gonçalves, J. A. N.</au><au>Sandonato, G. M.</au><au>Iha, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron field emission measurements from boron-doped CVD diamond on tantalum</atitle><jtitle>Brazilian journal of physics</jtitle><addtitle>Braz. J. Phys</addtitle><date>2003-03-01</date><risdate>2003</risdate><volume>33</volume><issue>1</issue><spage>94</spage><epage>97</epage><pages>94-97</pages><issn>0103-9733</issn><issn>1678-4448</issn><abstract>Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.</abstract><pub>Sociedade Brasileira de Física</pub><doi>10.1590/S0103-97332003000100006</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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title | Electron field emission measurements from boron-doped CVD diamond on tantalum |
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