Electron field emission measurements from boron-doped CVD diamond on tantalum

Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without...

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Veröffentlicht in:Brazilian journal of physics 2003-03, Vol.33 (1), p.94-97
Hauptverfasser: Gonçalves, J. A. N., Sandonato, G. M., Iha, K.
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container_title Brazilian journal of physics
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creator Gonçalves, J. A. N.
Sandonato, G. M.
Iha, K.
description Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.
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title Electron field emission measurements from boron-doped CVD diamond on tantalum
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