Electron field emission measurements from boron-doped CVD diamond on tantalum
Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without...
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Veröffentlicht in: | Brazilian journal of physics 2003-03, Vol.33 (1), p.94-97 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field. |
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ISSN: | 0103-9733 1678-4448 |
DOI: | 10.1590/S0103-97332003000100006 |