InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth

InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth

The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 m m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB ba...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Brazilian journal of physics 1997-12, Vol.27 (4), p.411-416
Hauptverfasser: Furtado, M.T., Manganote, E.J.T., Bordeaux-Rêgo, A.C.G., Steinhagen, F., Janning, H., Burkhard, H.
Format: Artikel
Sprache:eng ; por
Schlagworte:
PHYSICS, MULTIDISCIPLINARY
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 416
container_issue 4
container_start_page 411
container_title Brazilian journal of physics
container_volume 27
creator Furtado, M.T.
Manganote, E.J.T.
Bordeaux-Rêgo, A.C.G.
Steinhagen, F.
Janning, H.
Burkhard, H.
description The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 m m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.
doi_str_mv 10.1590/S0103-97331997000400001
format Article
fullrecord <record><control><sourceid>scielo_cross</sourceid><recordid>TN_cdi_scielo_journals_S0103_97331997000400001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><scielo_id>S0103_97331997000400001</scielo_id><sourcerecordid>S0103_97331997000400001</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1361-25ad42800075cb58c506500c78acc160e8ca8fc26f3133d9c6ea4373579e9b463</originalsourceid><addsrcrecordid>eNp1kGFLwzAQhoMoOKe_wfyBzkvTNM3HOXQrTBSm-LFkaeoysmQmrWP_3s6JCOKH4164e-7lXoSuCYwIE3CzAAI0EZxSIgQHgKwvICdo8DM4_aXP0UWMa4CUQUYHKJRuKsfxZmynsnS9KN0TnsuoA96ZdoUnfrMNOkbzoe0eL9ogjdM1fuhsa9476dpug1-1tT2z1yHixgc8M28rvNjqw56vOytb4x2-la7embpdXaKzRtqor777EL3c3z1PZsn8cVpOxvNEEZqTJGWyztKi_4UztWSFYpAzAMULqRTJQRdKFo1K84YSSmuhci0zyinjQotlltMhGh3vRmW09dXad8H1htVXYtWfxHqAHwEVfIxBN9U2mI0M-4pAdcj6X_ITQ85vMg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth</title><source>EZB-FREE-00999 freely available EZB journals</source><creator>Furtado, M.T. ; Manganote, E.J.T. ; Bordeaux-Rêgo, A.C.G. ; Steinhagen, F. ; Janning, H. ; Burkhard, H.</creator><creatorcontrib>Furtado, M.T. ; Manganote, E.J.T. ; Bordeaux-Rêgo, A.C.G. ; Steinhagen, F. ; Janning, H. ; Burkhard, H.</creatorcontrib><description>The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 m m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.</description><identifier>ISSN: 0103-9733</identifier><identifier>ISSN: 1678-4448</identifier><identifier>EISSN: 0103-9733</identifier><identifier>DOI: 10.1590/S0103-97331997000400001</identifier><language>eng ; por</language><publisher>Sociedade Brasileira de Física</publisher><subject>PHYSICS, MULTIDISCIPLINARY</subject><ispartof>Brazilian journal of physics, 1997-12, Vol.27 (4), p.411-416</ispartof><rights>This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids></links><search><creatorcontrib>Furtado, M.T.</creatorcontrib><creatorcontrib>Manganote, E.J.T.</creatorcontrib><creatorcontrib>Bordeaux-Rêgo, A.C.G.</creatorcontrib><creatorcontrib>Steinhagen, F.</creatorcontrib><creatorcontrib>Janning, H.</creatorcontrib><creatorcontrib>Burkhard, H.</creatorcontrib><title>InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth</title><title>Brazilian journal of physics</title><addtitle>Braz. J. Phys</addtitle><description>The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 m m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.</description><subject>PHYSICS, MULTIDISCIPLINARY</subject><issn>0103-9733</issn><issn>1678-4448</issn><issn>0103-9733</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNp1kGFLwzAQhoMoOKe_wfyBzkvTNM3HOXQrTBSm-LFkaeoysmQmrWP_3s6JCOKH4164e-7lXoSuCYwIE3CzAAI0EZxSIgQHgKwvICdo8DM4_aXP0UWMa4CUQUYHKJRuKsfxZmynsnS9KN0TnsuoA96ZdoUnfrMNOkbzoe0eL9ogjdM1fuhsa9476dpug1-1tT2z1yHixgc8M28rvNjqw56vOytb4x2-la7embpdXaKzRtqor777EL3c3z1PZsn8cVpOxvNEEZqTJGWyztKi_4UztWSFYpAzAMULqRTJQRdKFo1K84YSSmuhci0zyinjQotlltMhGh3vRmW09dXad8H1htVXYtWfxHqAHwEVfIxBN9U2mI0M-4pAdcj6X_ITQ85vMg</recordid><startdate>199712</startdate><enddate>199712</enddate><creator>Furtado, M.T.</creator><creator>Manganote, E.J.T.</creator><creator>Bordeaux-Rêgo, A.C.G.</creator><creator>Steinhagen, F.</creator><creator>Janning, H.</creator><creator>Burkhard, H.</creator><general>Sociedade Brasileira de Física</general><scope>AAYXX</scope><scope>CITATION</scope><scope>GPN</scope></search><sort><creationdate>199712</creationdate><title>InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth</title><author>Furtado, M.T. ; Manganote, E.J.T. ; Bordeaux-Rêgo, A.C.G. ; Steinhagen, F. ; Janning, H. ; Burkhard, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1361-25ad42800075cb58c506500c78acc160e8ca8fc26f3133d9c6ea4373579e9b463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; por</language><creationdate>1997</creationdate><topic>PHYSICS, MULTIDISCIPLINARY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Furtado, M.T.</creatorcontrib><creatorcontrib>Manganote, E.J.T.</creatorcontrib><creatorcontrib>Bordeaux-Rêgo, A.C.G.</creatorcontrib><creatorcontrib>Steinhagen, F.</creatorcontrib><creatorcontrib>Janning, H.</creatorcontrib><creatorcontrib>Burkhard, H.</creatorcontrib><collection>CrossRef</collection><collection>SciELO</collection><jtitle>Brazilian journal of physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Furtado, M.T.</au><au>Manganote, E.J.T.</au><au>Bordeaux-Rêgo, A.C.G.</au><au>Steinhagen, F.</au><au>Janning, H.</au><au>Burkhard, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth</atitle><jtitle>Brazilian journal of physics</jtitle><addtitle>Braz. J. Phys</addtitle><date>1997-12</date><risdate>1997</risdate><volume>27</volume><issue>4</issue><spage>411</spage><epage>416</epage><pages>411-416</pages><issn>0103-9733</issn><issn>1678-4448</issn><eissn>0103-9733</eissn><abstract>The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 m m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.</abstract><pub>Sociedade Brasileira de Física</pub><doi>10.1590/S0103-97331997000400001</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0103-9733
ispartof Brazilian journal of physics, 1997-12, Vol.27 (4), p.411-416
issn 0103-9733
1678-4448
0103-9733
language eng ; por
recordid cdi_scielo_journals_S0103_97331997000400001
source EZB-FREE-00999 freely available EZB journals
subjects PHYSICS, MULTIDISCIPLINARY
title InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T15%3A24%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scielo_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaAs/AlGaInAs/InP%20Laser%20with%20Compressively%20Strained%20Multiquantum%20Well%20Layers%20for%20High%20Speed%20Modulation%20Bandwidth&rft.jtitle=Brazilian%20journal%20of%20physics&rft.au=Furtado,%20M.T.&rft.date=1997-12&rft.volume=27&rft.issue=4&rft.spage=411&rft.epage=416&rft.pages=411-416&rft.issn=0103-9733&rft.eissn=0103-9733&rft_id=info:doi/10.1590/S0103-97331997000400001&rft_dat=%3Cscielo_cross%3ES0103_97331997000400001%3C/scielo_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_scielo_id=S0103_97331997000400001&rfr_iscdi=true