InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth

The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 m m is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth.