Microscopic aspects of the colonization of Pyricularia oryzae on the rachis of wheat plants supplied with silicon

Considering the importance of blast, caused by Pyricularia oryzae, to reduce wheat yield, this study investigate how silicon (Si) could reduce the wheat blast symptoms in the rachis tissues using light microscopy and scanning electron microscopy. Wheat plants (cv. BR 18) were grown in hydroponic cul...

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Veröffentlicht in:Bragantia 2015-06, Vol.74 (2), p.207-214
Hauptverfasser: Cruz, Maria Fernanda Antunes da, Silva, Larisse Arantes Freitas, Rios, Jonas Alberto, Debona, Daniel, Rodrigues, Fabrício Ávila
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Sprache:eng
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Zusammenfassung:Considering the importance of blast, caused by Pyricularia oryzae, to reduce wheat yield, this study investigate how silicon (Si) could reduce the wheat blast symptoms in the rachis tissues using light microscopy and scanning electron microscopy. Wheat plants (cv. BR 18) were grown in hydroponic culture with either 0 (–Si) or 2 mM (+Si) of Si. Blast symptoms were very well developed on the spikes of the –Si plants, which showed intense discoloration in contrast with the spikes of the +Si plants. At 72 hours after inoculation (hai), fungal hyphae extensively colonized the epidermis and the collenchyma tissue in the radial direction in the rachis of the –Si plants. In the +Si plants, fungal hyphae colonized the epidermis and the collenchyma cells to a lesser extent than in the –Si plants. At 96 hai, fungal hyphae were observed in the epidermis, vascular bundles and cortical tissue in the rachis node of the -Si plants. In the +Si plants, a phenolic-like material was detected in the parenchyma with lower fungal colonization in comparison with the –Si plants. In scanning electron microscopy, fungal hyphae were scarcely observed in the upper epidermal, collenchyma and parenchyma cells in the rachis tissue of the +Si plants, whereas in the rachis tissue of the –Si plants, fungal hyphae extensively colonized the epidermis, collenchyma, parenchyma and vascular bundles.
ISSN:0006-8705
1678-4499
1678-4499
DOI:10.1590/1678-4499.0023