Impact of electrode recrystallization on the stability of organic transistors

Organic field-effect transistors (OFETs) have attracted wide attention due to their low cost, light weight, and mechanical flexibility. However, stability limits the practical application of OFETs. Although many strategies have been developed to stabilize organic semiconductor (OSC) films to improve the stability of OFETs, the impact of the electrode on the stability of OFETs has been ignored. Here, we demonstrate in detail the influence of recrystallization of polycrystalline metal electrodes on the stability of OFETs. Furthermore, the mechanically and thermally stable nano-graphene (NG) electrodes are prepared by the plasma-enhanced chemical vapor deposition (PECVD) method. The NG electrodes show good compatibility with OSCs, and the average mobility of bottom-gate bottom-contact dinaphtho[2,3- b :2′,3′- f ]thieno[3,2- b ]thiophene (DNTT) OFETs reaches 1.31 cm 2 V −1 s −1 . Moreover, the stable NG electrodes greatly improve the thermal stability of DNTT OFETs. This work proves that the stability of the electrodes plays a vital role in the stability of OFETs and provides a new idea for stabilizing OFETs. This work presents that the recrystallization of the electrode plays an important role in the stability of the organic transistors.