Synergetic enhancement of CsPbI nanorod-based high-performance photodetectors PbSe quantum dot interface engineering

The advancement of optoelectronic applications relies heavily on the development of high-performance photodetectors that are self-driven and capable of detecting a wide range of wavelengths. CsPbI 3 nanorods (NRs), known for their outstanding optical and electrical properties, offer direct bandgap characteristics, high absorption coefficients, and long carrier diffusion lengths. However, challenges such as stability and limited photoluminescence quantum yield have impeded their widespread application. By integrating PbSe colloidal quantum dots (CQDs) with CsPbI 3 NRs, the hybrid nanomaterial harnesses the benefits of each component, resulting in enhanced optoelectronic properties and device performance. In this work, a self-powered and broadband photodetector, ITO/ZnO/CsPbI 3 :PbSe/CuSCN/Au, is fabricated, in which CsPbI 3 NRs are decorated with PbSe QDs as the photoactive layer, ZnO as the electron-transporting layer and CuSCN as the hole-transporting layer. The device performance is further improved through the incorporation of Cs 2 CO 3 into the ZnO layer, resulting in an enhancement of its overall operational characteristics. As a result, a notable responsivity of 9.29 A W −1 and a specific detectivity of 3.17 × 10 14 Jones were achieved. Certainly, the TCAD simulations closely correlate with our experimental data, facilitating a comprehensive exploration of the fundamental physical mechanisms responsible for the improved performance of these surface-passivated heterojunction photodetectors. This opens up exciting possibilities for substantial advancements in the realm of next-generation optoelectronic devices. The article explores the enhanced performance of photodetectors based on nanocomposites of CsPbI 3 nanorods and PbSe QDs by studying their impact on charge carrier dynamics and optoelectronic properties, thus to understand the underlain mechanism.