Modulation of the near-infrared-I and -II luminescence of thulium-incorporated lead-free double perovskites
Currently, lanthanide-doped metal halide perovskites with near-infrared (NIR) luminescence are receiving considerable attention. However, they suffer from low NIR efficiency, particularly in the NIR-II emission range, and are primarily excited by high-energy ultraviolet light. In this work, high-per...
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Veröffentlicht in: | Inorganic chemistry frontiers 2024-10, Vol.11 (2), p.696-6969 |
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Zusammenfassung: | Currently, lanthanide-doped metal halide perovskites with near-infrared (NIR) luminescence are receiving considerable attention. However, they suffer from low NIR efficiency, particularly in the NIR-II emission range, and are primarily excited by high-energy ultraviolet light. In this work, high-performance NIR-I and -II emissions were realized by co-doping a Cs
2
NaInCl
6
lattice with Tm
3+
ions as luminescent emitters and Sb
3+
and Te
4+
ions as sensitizer ions, where Sb
3+
ions can enable short-wavelength high-energy excitation and Te
4+
ions can enable long-wavelength blue-light excitation. The NIR photoluminescence quantum yield (PLQY) reaches an unprecedented 58.0% in Cs
2
NaInCl
6
:Sb
3+
/Tm
3+
(NIR-II emission: 1224 nm-48.9%), which is attributed to the presence of the
1
G
4
energy level of the Tm
3+
ion acting as a bridge, efficiently transferring energy from high-energy states of Sb
3+
to NIR-emissive states. Moreover, Tm
3+
ions can be sensitized by Te
4+
ions that have broadband absorption in the blue region, which enable a high NIR PLQY of 10.3% in Cs
2
NaInCl
6
:Te
4+
/Tm
3+
under 420 nm excitation. The excellent NIR luminescence performance combined with excellent environmental stability endows Cs
2
NaInCl
6
:Sb
3+
/Tm
3+
and Cs
2
NaInCl
6
:Te
4+
/Tm
3+
with considerable potential for application in night-vision devices.
High-performance NIR emission was observed in Cs
2
NaInCl
6
:Tm
3+
, where the sensitizer Sb
3+
achieved high-efficiency NIR emission and Te
4+
enabled blue-light excitation. |
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ISSN: | 2052-1553 2052-1545 2052-1553 |
DOI: | 10.1039/d4qi01772b |