Fabrication of ZnMnO@ZnInS ball-in-ball hollow microspheres as efficient photocatalysts for hydrogen evolution

Semiconductor photocatalytic hydrogen evolution (PHE) has emerged as a feasible solution to address the problem of energy shortage. Hydrogen energy can thus be developed by creating a photocatalyst with a high activity for producing hydrogen and an effective charge transfer route. This study describ...

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Veröffentlicht in:Inorganic chemistry frontiers 2024-09, Vol.11 (19), p.6455-6466
Hauptverfasser: Liu, Lijun, Tang, Wenya, Zuo, Luyang, Fan, Huitao, Li, Bo, Wang, Liya
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Zusammenfassung:Semiconductor photocatalytic hydrogen evolution (PHE) has emerged as a feasible solution to address the problem of energy shortage. Hydrogen energy can thus be developed by creating a photocatalyst with a high activity for producing hydrogen and an effective charge transfer route. This study describes the preparation of innovative hierarchical ZnMn 2 O 4 @ZnIn 2 S 4 (ZMOZ) ball-in-ball hollow microspheres as photocatalysts using a straightforward solvothermal technique. Remarkably, the PHE rate of 10% ZMOZ can reach 11.12 mmol g −1 h −1 , which is roughly 4.9 times greater than that of pure ZnIn 2 S 4 (ZIS). Aside from the benefits of building heterojunctions, the regulation of the morphology, such as hollow structures, can provide more exposed active sites and enhance the light-absorption capability by internal multilight scattering. Density functional theory (DFT) calculations, X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy and time-resolved PL (TRPL) spectroscopy demonstrated that the charge separation efficiency in the composite was notably improved. This work offers a cost-effective and environmentally friendly method for utilizing visible light for an effective PHE. This study describes the preparation of ZnMn 2 O 4 @ZnIn 2 S 4 ball-in-ball hollow microspheres as photocatalysts. Remarkably, the PHE rate of 10% ZnMn 2 O 4 @ZnIn 2 S 4 can reach 11.12 mmol g −1 h −1 , roughly 4.9 times greater than that of pure ZnIn 2 S 4 .
ISSN:2052-1553
DOI:10.1039/d4qi01447b