growth of a heterojunction cocatalyst on the g-CN surface enhances charge transfer to improve photocatalytic activity

The photocatalytic activity of g-C 3 N 5 is limited by its low photoelectric separation efficiency and high carrier recombination rate. To address this problem, the band gap of g-C 3 N 5 was controlled via P doping, followed by deposition of a CoOOH·CoO x cocatalyst. The synthesized CoOOH·CoO x /P-C 3 N 5 composite shows the characteristics of high photoelectric separation efficiency and low carrier recombination rate. DFT calculation and XPS revealed that P replaced the C atoms in g-C 3 N 5 and interact with the Co atom to form an electron transport channel, showing P-dependent co-catalytic activity. The CoOOH·CoO x cocatalyst accelerated the electron transfer process of P-C 3 N 5 while inhibiting the recombination of carriers and improving the photocatalytic reaction efficiency. The advantages of this strategy were verified by the degradation of TC, and the reaction rate of the obtained material was 59.6 times higher than that of pure g-C 3 N 5 . Using this strategy, the photoelectric separation efficiency was simultaneously enhanced, and then the fast recombination of the g-C 3 N 5 carriers was effectively suppressed. A novel strategy involves depositing Co on P-doped g-C 3 N 5 to create a P-dependent cocatalyst, which addresses the issue of CoOOH·CoO x binding with g-C 3 N 5 and enhances photocatalytic efficiency by suppressing fast carrier recombination.