GeSe/WSe mixed dimensional p-n junction photoelectric properties

Heterojunctions prepared utilizing diverse 2D materials enhance a variety of optoelectronic devices. Here, we present GeSe/WSe 2 mixed-dimensional p-n heterojunctions, which broaden the possibility of material combination and selection in 2D/layered heterojunction devices, while also providing material parameters to facilitate the development of optoelectronic devices based on 2D/layered semiconductor materials. The innovative preparation of GeSe/WSe 2 mixed-dimensional p-n heterojunctions broadens material combination possibilities in 2D/layered-heterojunction devices, providing parameters for device development.