Optimized physical properties of [001]-textured (Na, K)NbO-based lead-free piezoceramics for high power piezoelectric energy harvesters
The output power of piezoelectric energy harvesters is influenced by the k p and d 33 × g 33 of the piezoceramics. The untextured 0.96(Na 0.5 K 0.5 )(Nb 1− x Sb x )O 3 -0.01CaZrO 3 -0.03(Bi 0.5 Ag 0.5 )ZrO 3 [NK(N 1− x S x )-CZ-BAZ] exhibited a low k p and d 33 × g 33 owing to its small d 33 and lar...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-01, Vol.12 (4), p.1268-128 |
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Zusammenfassung: | The output power of piezoelectric energy harvesters is influenced by the
k
p
and
d
33
×
g
33
of the piezoceramics. The untextured 0.96(Na
0.5
K
0.5
)(Nb
1−
x
Sb
x
)O
3
-0.01CaZrO
3
-0.03(Bi
0.5
Ag
0.5
)ZrO
3
[NK(N
1−
x
S
x
)-CZ-BAZ] exhibited a low
k
p
and
d
33
×
g
33
owing to its small
d
33
and large
T
33
/
0
. The [001]-textured
x
= 0.01 composition exhibited an enhanced
k
p
(0.73) and
d
33
×
g
33
(32.2 × 10
−12
m
2
N
−1
) owing to the increased
d
33
and decreased
T
33
/
0
. The domain of the textured NK(N
1−
x
S
x
)-CZ-BAZ changed from microdomains to nanodomains and polar nanoregions with an increasing
x
, and the altered domain structure affected the piezoelectric properties of the samples. The harvester fabricated using the [001]-textured
x
= 0.01 composition exhibited high power (2.7 mW) and a large power density (6.72 mW cm
−3
), which is similar to the largest power density obtained from harvesters fabricated using NKN-related ceramics. Therefore, the [001]-textured NK(N
0.99
S
0.01
)-CZ-BAZ is a promising option for application in harvesters, and the [001]-texturing technique proves to be an efficient method for developing piezoceramics for use in harvesters.
The [001]-textured 0.96NK(N
0.99
S
0.01
)-0.01CZ-0.03BAZ piezoceramic has large
k
p
and
d
33
×
g
33
values; therefore, the piezoelectric energy harvester fabricated using this piezoceramic exhibits a large power density. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d3tc03601d |