Ultrafast nonlinear optical properties of MTe (M = V and Ta) and their application as broadband saturable absorbers

Two-dimensional transition-metal dichalcogenides, specifically MTe 2 (M = V and Ta), have recently inspired significant interest due to their unique electronic properties. However, their ultrafast nonlinear optical properties have not been extensively studied for use in ultrafast photonics applicati...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-02, Vol.12 (7), p.2441-2449
Hauptverfasser: Zhang, Wenyao, Li, Zichen, Leng, Xudong, Jing, Qun, Wen, Qiao
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Zusammenfassung:Two-dimensional transition-metal dichalcogenides, specifically MTe 2 (M = V and Ta), have recently inspired significant interest due to their unique electronic properties. However, their ultrafast nonlinear optical properties have not been extensively studied for use in ultrafast photonics applications. In this study, MTe 2 (M = V and Ta) nanosheets were prepared using the liquid-phase exfoliation technique, and their bandgaps were calculated using density functional theory. The results show that both materials exhibit zero bandgaps, indicating that they are suitable for broadband photonic applications. The nonlinear absorptions of VTe 2 and TaTe 2 were characterized at 1.5 μm, with saturation intensities of 0.61 MW cm −2 and 1.36 MW cm −2 , and modulation depths of 2.30% and 2.55%, respectively. By using the two fabricated materials as saturable absorbers, highly-stable passively mode-locked Er-doped fiber lasers were achieved for the first time, with pulse durations of 494 and 773 fs. Our experimental findings not only demonstrate the potential of MTe 2 (M = V and Ta) in ultrafast photonics applications, but also advance photonic and optoelectronic applications. Two novel saturable absorbers based on MTe 2 (M = V and Ta) were successfully fabricated and the nonlinear optical response of these materials was thoroughly investigated.
ISSN:2050-7526
2050-7534
DOI:10.1039/d3tc03456a