Tuning nitrogen species in 3D porous carbon boron doping for boosted Zn-ion storage capability
Edge located nitrogen (edge-N) species in carbon materials have been commonly recognized as one of the most active sites for Zn 2+ storage, by virtue of their more accessible microstructure and lower adsorption energy barrier. However, modulating N species types and enriching the concentration of ed...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2024-01, Vol.12 (5), p.326-333 |
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Zusammenfassung: | Edge located nitrogen (edge-N) species in carbon materials have been commonly recognized as one of the most active sites for Zn
2+
storage, by virtue of their more accessible microstructure and lower adsorption energy barrier. However, modulating N species types and enriching the concentration of edge-N (pyridinic-N and pyrrolic-N) are still daunting challenges. In this work, the conversion of graphitic-N to edge-N in a carbon matrix was creatively realized by the additional incorporation of boron element and the ratio of edge-N reached up to 81.6% in terms of the total N content. The optimized B-doped rich edge-N porous carbon (BENC) with matchable pore size to accommodate solvated Zn
2+
and abundant zincophilic sites exhibits outstanding Zn
2+
storage capabilities and delivers a high reversible capacity (354.6 F g
−1
at 0.1 A g
−1
), excellent power density (126.2 W h kg
−1
) and almost no capacity loss after 20 000 cycles. Moreover, density functional theory (DFT) calculations further discover that B/edge-N sites reduce the adsorption energy barrier of Zn
2+
, contributing to the invertible adsorption/desorption of Zn
2+
. This study demonstrates the synergistic effect of B and N dopants on capacity enhancement in carbon materials for Zn
2+
storage applications.
A strategy for the conversion of graphitic-N to edge-N in a carbon matrix by the additional incorporation of boron element for zinc-ion hybrid supercapacitor cathodes. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/d3ta07207j |