Bottom-up synthesis of a pyramid-type (Pt/4nmCeO)/SiO catalyst a surface reduction strategy
The interfaces in heterogeneous catalysts play an important role in their performances by either directly providing active sites through the synergistic effects from different catalyst compositions or indirectly modulating the state of active sites. However, constructing abundant interfaces in heter...
Gespeichert in:
Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-05, Vol.11 (2), p.1927-1937 |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The interfaces in heterogeneous catalysts play an important role in their performances by either directly providing active sites through the synergistic effects from different catalyst compositions or indirectly modulating the state of active sites. However, constructing abundant interfaces in heterogeneous catalysts is a key scientific challenge since it requires the high dispersion of all catalyst compositions involved in substrate activation. A surface reduction strategy is proposed as the solution for this challenge, which creates a pyramid-type catalyst, (Pt/4nmCeO
2
)/SiO
2
, with maximized interfacial Pt-CeO
2
sites as an example. Pt is chemically bound in surface reductive centers of 4 nm CeO
2
nano-islands, generating stable Pt
2+
sites with moderate hydrogenation capacity compared to Pt
0
sites on bulk CeO
2
and SiO
2
. This work facilitates the development of heterogeneous catalysts by presenting a high level of controlling the local chemical environment within nanomaterials.
A "support reduction strategy" is reported to construct spatially adjacent, highly dispersed Pt and CeO
2
sites in the (Pt/4nmCeO
2
)/SiO
2
pyramid-type catalyst. Pt species are selectively trapped in the surface reductive sites on 4 nm CeO
2
nano-islands. |
---|---|
ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/d3ta01563g |