Synthesis of hollow sphere structured TiO loaded with AgO and its photocatalytic activity
Owing to its high stability and catalytic activity, TiO 2 has been widely used as a photocatalyst where its photocatalytic performance can be significantly improved by microstructure regulation and semiconductor loading. Herein, hollow TiO 2 spheres were prepared using phenolic resin as the template...
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Veröffentlicht in: | Reaction chemistry & engineering 2024-04, Vol.9 (4), p.861-871 |
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Zusammenfassung: | Owing to its high stability and catalytic activity, TiO
2
has been widely used as a photocatalyst where its photocatalytic performance can be significantly improved by microstructure regulation and semiconductor loading. Herein, hollow TiO
2
spheres were prepared using phenolic resin as the template and the Ag
2
O nanoparticles were loaded onto the TiO
2
spheres by the wet precipitation method. The physicochemical characteristics demonstrated the successful preparation of the Ag
2
O/TiO
2
nanocomposites. Various AgNO
3
concentrations were employed and the results revealed that increasing the loaded Ag amount from 16.24% to 62.25% resulted in an increase in the corresponding Ti : Ag ratio in the Ag
2
O/TiO
2
nanocomposites from 1 : 0.79 to 1 : 10.48, respectively. The bandgap of the synthesized Ag
2
O/TiO
2
nanocomposites was in the range of 1.61-1.75 eV. The photodegradation rate of phenol in the presence of Ag
2
O/TiO
2
as the catalyst reached 95.2% under UV light irradiation which was much higher than that under visible light irradiation. This improvement can be attributed to the synergistic effect of Ag
2
O and TiO
2
. The loading of Ag
2
O induced more electron traps on the surface of the Ag
2
O/TiO
2
composites, thereby increasing the mobility of the carrier and thus improving the catalytic activity.
Owing to its high stability and catalytic activity, TiO
2
has been widely used as a photocatalyst where its photocatalytic performance can be significantly improved by microstructure regulation and semiconductor loading. |
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ISSN: | 2058-9883 |
DOI: | 10.1039/d3re00473b |